In-Ga-O-BASED OXIDE SINTERED BODY, TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHODS OF MANUFACTURING THE SAME

In−Ga−O系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法

Abstract

【課題】スパッタリング法を用いて酸化物半導体薄膜を成膜する際に発生する異常放電を抑制し、酸化物半導体薄膜を安定かつ再現性よく得ることができる酸化物焼結体を提供する。 【解決手段】結晶構造が、実質的にビックスバイト構造を示す酸化インジウムからなり、前記酸化インジウムにガリウム原子が固溶しており、原子比Ga/(Ga+In)が0.10〜0.15である酸化物焼結体をスパッタリング用ターゲット材とする。 【選択図】図3
<P>PROBLEM TO BE SOLVED: To provide an oxide sintered body with which an oxide semiconductor thin film can be stably obtained with good reproducibility by suppressing an abnormal discharge generated when the oxide semiconductor thin film is formed using a sputtering method. <P>SOLUTION: The oxide sintered body which is made of indium oxide whose crystal structure is substantially a bixbyite structure, has a gallium atom solid-dissolved in the indium oxide and has an atomic ratio Ga/(Ga+In) of 0.10 to 0.15, is used as a target material for sputtering. <P>COPYRIGHT: (C)2011,JPO&INPIT

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