半導体ウェーハの形状測定方法およびそれに用いる形状測定装置

Method of measuring shape of semiconductor wafer and shape measuring instrument used therefor

Abstract

PROBLEM TO BE SOLVED: To provide a method of measuring a shape of an end of a semiconductor wafer used for a large-diameter wafer and a shape measuring instrument used therefor. SOLUTION: In the method of shape measurement, the shape measuring instrument is used by including: a distance measuring means 2 making light emitted by a light emitter 2a reflected by the end of the semiconductor wafer 12 and detected by a light receiver 2b to measure a distance to the end; a first rocking mechanism supporting the measuring means 2 so as to allow rocking motion within a certain angle range; and a second rocking mechanism supporting the first rocking mechanism so as to allow rocking motion within a certain angle range. Light emitted by the light emitter 2a of the measuring means 2 is made to reflect the end at each of prescribed angles of the second rocking mechanism to measure the amount of received light by the light receiver 2b. An angle of the first rocking mechanism maximizing the amount of received light is acquired. Contour points are calculated from a measured distance acquired by the measuring means at the relevant angle from the relevant angle of the first rocking means, and from prescribed angles of the second rocking mechanism, thus acquiring point group data showing the contour shape of the end. COPYRIGHT: (C)2011,JPO&INPIT
【課題】大口径ウェーハに用いることができる半導体ウェーハの端部形状を測定する方法およびそれに用いる形状測定装置を提供する。 【解決手段】発光部2aが発する光を半導体ウェーハ12の端部で反射させ、受光部2bで検出して端部との距離を測定する距離測定手段2と、距離測定手段2を一定の角度範囲で揺動可能に支持する第1揺動機構と、第1揺動機構を一定の角度範囲で揺動可能に支持する第2揺動機構とを備える形状測定装置を用いる形状測定方法であって、第2揺動機構の所定角度ごとにおいて、距離測定手段2の発光部2aが発する光を端部に反射させ、受光部2bで受光量を測定し、受光量が最大となる第1揺動機構の角度を求め、当該角度における距離測定手段による測定距離と、第1揺動機構の当該角度および第2揺動機構の所定角度から座標変換により輪郭点を算出し、端部の輪郭形状を示す点郡データを得る。 【選択図】図4

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