半導体レーザにおける温度補償

Abstract

半導体レーザの温度を測及び制御し、波長を安定化する、半導体レーザの温度制御機構の駆動方法を提供する。半導体レーザの動作温度及び周囲温度を表す信号が発生され、周囲温度信号の関数である目標レーザ動作温度が確立される。次いで、動作温度信号と目標レーザ動作温度の間の相関度を高めるように、半導体レーザの温度制御機構が駆動される。別の実施形態も開示される。
The present invention relates to relates generally to semiconductor lasers and, more particularly, to schemes for measuring and controlling the temperature of semiconductor lasers and schemes for wavelength stabilization of semiconductor lasers. According to one embodiment of the present invention, a method of driving a temperature control mechanism in a semiconductor laser is provided. According to the method, signals representing an operating temperature of the semiconductor laser and ambient temperature are generated and a target laser operating temperature that is a function of the ambient temperature signal is established. A temperature control mechanism of the semiconductor laser is then driven to increase a degree of correlation between the operating temperature signal and the target laser operating temperature. Additional embodiments are disclosed and claimed.

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    JP-2011192918-ASeptember 29, 2011Qd Laser Inc, 株式会社QdレーザLaser system and method of manufacturing the same
    JP-2014013823-AJanuary 23, 2014Sumitomo Electric Ind Ltd, 住友電気工業株式会社Method of controlling tunable semiconductor laser
    WO-2011114906-A1September 22, 2011株式会社Qdレーザレーザシステムおよびその製造方法